Process Hierarchy

  Silicon nitride RIE (PlasmaLab)
Process characteristics:
must be 1 .. 2 µm
1 .. 2 µm
Ambient to which substrate is exposed during processing
trifluoromethane, O2, CF4
Etch type dry anisotropic
Material silicon nitride
Wafer size
Wafer size
Equipment Plasmalab MicroEtch
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 200 mm: 1
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon carbide, silicon, gallium arsenide
Wafer thickness
List or range of wafer thicknesses the tool can accept
0 .. 1000 µm