Process Hierarchy

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  Low stress polysilicon LPCVD II (300 MPa)
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 1 µm
0 .. 1 µm
Deposition rate
Rate at which material is added to a wafer
 42 .. 44 Å/min
Material polysilicon
Pressure
Pressure of process chamber during processing
 0.0146 kPa
Residual stress 270 .. 300 MPa
Sides processed both
Temperature 585 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (D-stack, tube #3)
Equipment characteristics:
Batch sizes 100 mm: 25
MOS clean yes
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator, fused silica
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 800 µm
Comments:
  • Residual stress data is for 1um thick films -as deposited.
  • After the phosphorus doping, and 1hr anneal @1000C, the stress in films changed to -80 +/-20 MPa (compressive).