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Low stress polysilicon LPCVD II (300 MPa): View
Low-stress SiN deposition
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Low stress polysilicon LPCVD II (300 MPa)
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 1 µm
0 .. 1 µm
Rate at which material is added to a wafer
42 .. 44 Å/min
Pressure of process chamber during processing
270 .. 300 MPa
Thermco TMX furnace (D-stack, tube #3)
100 mm: 25
Types of wafers this equipment can accept
1-flat, 2-flat, notched, no-flat
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator, fused silica
List or range of wafer thicknesses the tool can accept
300 .. 800 µm
Residual stress data is for 1um thick films -as deposited.
After the phosphorus doping, and 1hr anneal @1000C, the stress in films changed to -80 +/-20 MPa (compressive).