on front Amorphous silicon PECVD |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
silane, helium |
|---|
| Material |
amorphous silicon |
|---|
| Microstructure |
amorphous |
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| Sides processed |
either |
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| Temperature |
400 °C |
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| Wafer size |
|
|---|
| Equipment |
PECVD tool #1
|
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25, 200 mm: 25 |
|---|
| MOS clean |
no |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), silicon, Pyrex (Corning 7740), quartz (single crystal), silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
