Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Amorphous silicon LPCVD
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0.05 .. 0.2 µm
0.05 .. 0.2 µm
Ambient
Ambient to which substrate is exposed during processing
 silane
Material amorphous silicon
Sides processed both
Temperature 565 °C
Wafer size
Wafer size
Equipment Furnace - Silicon
Equipment characteristics:
Batch sizes 100 .. 200 mm: 25
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 700 µm