Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Focused Ion Beam
Process characteristics:
Depth
Depth
must be 1 .. 20 µm
1 .. 20 µm
Duration
Duration*
must be 0.5 .. 100 hour
0.5 .. 100 hour
Batch size 1
Wafer size
Wafer size
Equipment Dual Column FIB
  • Note - insulating materials and or substrates may make imaging and cutting more complex.
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer holder
Device that holds the wafers during processing.
 aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 glass-ceramic, ceramic, silicon carbide, gallium arsenide, ZnSe, PET, nickel, other, titanium, silicon germanium, gallium phosphide, Zeonor, BK7, Corning Eagle 2000, silicon on insulator, polystyrene, quartz (single crystal), silicon, polycarbonate, lithium niobate, copper, polyethylene, ABS_plastic, polypropylene, sapphire, Pyrex (Corning 7740), germanium, lanthanum aluminate, silicon on sapphire, alumina, quartz (fused silica), PMMA, indium phosphide, Phosphate Glass, PEEK, PZT, Foturan (Schott), Borofloat (Schott), fused silica, niobium, Corning 7070 Glass, glass (Hoya), Corning 1737
Wafer thickness
List or range of wafer thicknesses the tool can accept
 0 .. 800 µm