Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Silicon Carbide ICP Etch
Process characteristics:
Depth
Etch Depth
Depth*
Etch Depth, must be 0 .. 5 µm
0 .. 5 µm
Etch rate 2000 Å/min
Temperature -150 .. 380 °C
Wafer size
Wafer size
Equipment Oxford Plasmalab 100
Equipment characteristics:
Batch sizes 100 mm: 1, 150 mm: 1, 75 mm: 1
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat, notched, no-flat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon carbide, silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm