Process Hierarchy

  Doped poly-SiC LPCVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 0.5 µm
0 .. 0.5 µm
Deposition rate
Rate at which material is added to a wafer
30 .. 60 nm/min
Excluded materials gold, aluminum
Material poly-SiC
Pressure of process chamber during processing
170 mTorr
Resistivity 0.025 .. 0.035 Ω*cm
Sides processed both
Temperature 800 °C
Wafer size
Wafer size
Equipment Tylan/Tystar Furnaces (SiC tube)
Equipment characteristics:
Batch sizes 100 mm: 24, 150 mm: 10
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon on insulator, silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 700 µm
  • N doped.
  • All metals, except refractory metals with melting point above 1500C excluded.