on front Amorphous Silicon Carbide (SiC) PECVD |
|
| Process characteristics: |
| Thickness Amount of material added to a wafer |
|
|---|
| Material |
silicon carbide |
|---|
| Microstructure |
amorphous |
|---|
| Refractive index |
2.1 |
|---|
| Sides processed |
either |
|---|
| Temperature |
380 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
PECVD tool #1
|
| Equipment characteristics: |
| Batch sizes |
100 mm: 25, 150 mm: 25, 200 mm: 25 |
|---|
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
quartz (fused silica), silicon, Pyrex (Corning 7740), quartz (single crystal), silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 1000 µm |
|---|
