Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  SiC RIE (AOE)
Process characteristics:
Depth
Depth*
must be 0.1 .. 250 µm
0.1 .. 250 µm
Etch type dry anisotropic
Mask material nickel
Material silicon carbide
Sides processed either
Wafer size
Wafer size
Equipment STS-AOE
Equipment characteristics:
Batch sizes 100 mm: 1, 75 mm: 1
Wafer holder
Device that holds the wafers during processing.
 conductive platen
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon carbide
Comments:
  • For Ni mask, etch selectivity is ~50:1.