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About MEMS
Electroplating: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Electroplating
Process characteristics:
Material
Material
*
cobalt
copper
gold
gold/tin
indium
lead/tin solder
nickel
nickel/cobalt/iron
NiFe
palladium
palladium/nickel
platinum
rhodium
silver
tin
Plating area
Area to be plated.
Plating area
mm
2
Area to be plated., must be 0.31 .. 7850 mm
2
0.31 .. 7850 mm
2
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 1 .. 30 µm
1 .. 30 µm
Aspect ratio
0.1 .. 15
Sides processed
either
Temperature
25 .. 60 °C
Equipment