Process Hierarchy

  P-type polygermanium LPCVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Deposition rate
Rate at which material is added to a wafer
1 µm/hour
Excluded materials gold
Material poly-Germanium
Residual stress 26 MPa
Setup time 60 min
Sheet resistance 1.7 .. 2.1 Ω/square
Sides processed both
Temperature 400 °C
Wafer size
Wafer size
Equipment Tystar furnace 20 (Ge / SiGe tube)
Equipment characteristics:
Batch sizes 100 mm: 24, 150 mm: 12
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
fused silica boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm