Process Hierarchy

  Boron pre-diffusion
Process characteristics:
Dopant concentration
Number of atoms per meter cubed
Dopant concentration*
Number of atoms per meter cubed, must be 0 .. 1e+20 atom/cc
0 .. 1e+20 atom/cc
Doping time
Doping time*
must be 0 .. 1000 min
0 .. 1000 min
Maximum temperature the substrate reaches during a process
Maximum temperature the substrate reaches during a process, must be 800 .. 1100 °C
800 .. 1100 °C
Ambient to which substrate is exposed during processing
nitrogen, oxygen
Batch size 25
Material boron
Sides processed both
Wafer size
Wafer size
Equipment Tylan Furnace (Boron diffusion, Tube #5)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • Wafers should have never had metal or silicide on them.
  • Wafers should go through a complete pre-diffusion clean at the diffusion wet bench within one hour before loading them into the furnace.