How to Start
Boron pre-diffusion: View
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
or call us at (703) 262-5368
Number of atoms per meter cubed
Number of atoms per meter cubed, must be 0 .. 1e+20 atom/cc
0 .. 1e+20 atom/cc
must be 0 .. 1000 min
0 .. 1000 min
Maximum temperature the substrate reaches during a process
Maximum temperature the substrate reaches during a process, must be 800 .. 1100 °C
800 .. 1100 °C
Ambient to which substrate is exposed during processing
Tylan Furnace (Boron diffusion, Tube #5)
Types of wafers this equipment can accept
no-flat, 1-flat, 2-flat
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon on insulator
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
Wafers should have never had metal or silicide on them.
Wafers should go through a complete pre-diffusion clean at the diffusion wet bench within one hour before loading them into the furnace.