Ion implantation
The substrate is placed in a vacuum chamber and bombarded by a beam of highly energized ions. The ions penetrate the surface of the substrate and are slowed down by collision with the atoms in the substrate. The penetration depth depends on the energy of the ions and on the atom density in the substrate. A thermal anneal is typically performed after implantation to repair the substrate crystal and incorporate the implanted ions.
| Process |
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| Ion implant |