Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Gold electroplating
Process characteristics:
Thickness
Thickness of material to be deposited.
Thickness*
Thickness of material to be deposited., must be 0 .. 30 µm
0 .. 30 µm
Material gold
Sides processed either
Temperature 50 °C
Wafer size
Wafer size
Equipment Plating cell
  • Requires a 10mm spot near edge of substrate fro electrical contact.
Equipment characteristics:
Piece dimension
Range of wafer piece dimensions the equipment can accept
 4 inch
Piece geometry
Geometry of wafer pieces the equipment can accept
 rectangular
Piece thickness
Range of wafer piece thickness the equipment can accept
 300 .. 1500 µm
Wafer geometry
Types of wafers this equipment can accept
 no-flat, 1-flat, 2-flat, notched
Wafer holder
Device that holds the wafers during processing.
 teflon
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 glass (category), Pyrex (Corning 7740), quartz (single crystal), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 1500 µm
Comments:
  • Total surface area to be
    plated must be provided by
    customer.
  • A metal seed layer must be present
    on the substrate.
  • If using photoresist mold,
    plating preparation (descum)
    is recommended.
  • Bath condition: pH=9.5, mild
    agitation