Process Hierarchy

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  Silicon nitride PECVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Batch size 3
Material silicon nitride
Measured film thickness variation (+/- %) 1.1
Residual stress -100 MPa
Sides processed either
Temperature 400 °C
Wafer size
Wafer size
Equipment SemiGroup 1000
Equipment characteristics:
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
silicon, silicon dioxide
Wafer thickness
List or range of wafer thicknesses the tool can accept
50 .. 2000 µm
  • Stress values of 250-320 MPa (across one batch) were reported for 2um thick films in May 03.