Low-stress silicon nitride LPCVD ( <120 MPa): View
Low-stress SiN deposition
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
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Low-stress silicon nitride LPCVD ( <120 MPa)
Thickness of material to be deposited.
Thickness of material to be deposited., must be 0 .. 2 µm
0 .. 2 µm
Rate at which material is added to a wafer
Measured film thickness variation (+/- %)
Pressure of process chamber during processing
50 .. 120 MPa
Tylan Furnace (Nitride, tube #10)
100 mm: 23
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Device that holds the wafers during processing.
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
quartz (fused silica), quartz (single crystal), silicon, silicon germanium, silicon on insulator
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
This process is for 4" wafers
The set up time consist of:
vent, load, ramp up,
stabilization, ramp down,
backfill and unload.
Standard pre-diffusion clean
at diffusion wet bench.
How to Start