Process Hierarchy

  Dry/wet/dry TCA oxidation
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0.1 .. 2.5 µm
0.1 .. 2.5 µm
Batch size 24
Material silicon dioxide
Pressure of process chamber during processing
1 atm
Sides processed both
Temperature 900 .. 1100 °C
Wafer size
Wafer size
Equipment Thermco TMX furnace (B-stack)
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 530 µm
  • Standard wet TCA oxidation process at Michigan.
  • Dry oxidation steps form interface layers only; bulk of oxide comes from the wet oxidation.
  • Wafers must have been Pre-Furnace Cleaned immediately prior to oxidation.