Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Wet oxidation (metal)
Process characteristics:
Thickness
Thickness of grown film.
Thickness*
Thickness of grown film., must be 0 .. 2 µm
0 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
 nitrogen
Batch size 25
Material silicon dioxide
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Temperature 1100 °C
Wafer size
Wafer size
Equipment Tylan Furnace (Silicide, Tube #7)
Equipment characteristics:
Wafer geometry
Types of wafers this equipment can accept
 no-flat, 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 quartz boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon on insulator, silicon on sapphire
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm
Comments:
  • Use when metal residues of aluminum, titanium, and tungsten in silicide form are present on wafers.
  • Standard pre-diffusion clean at diffusion wet bench.
  • Prices listed for 1100 degC oxidation temperature. Lower temperatures available upon request at higher cost.