Process Hierarchy

  Poly-Silicon-Germanium nucleation layer LPCVD
Material poly-Silicon-Germanium
Sides processed both
Temperature 400 °C
Wafer size
Wafer size
Equipment Tystar furnace 20 (Ge / SiGe tube)
Equipment characteristics:
Batch sizes 100 mm: 24, 150 mm: 12
Wafer geometry
Types of wafers this equipment can accept
1-flat, 2-flat, no-flat
Wafer holder
Device that holds the wafers during processing.
fused silica boat
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Wafer thickness
List or range of wafer thicknesses the tool can accept
300 .. 600 µm
  • Approximately 60nm thick.