Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Sinter
Process characteristics:
Process duration
Process duration*
must be 10 .. 60 min
10 .. 60 min
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 300 .. 500 °C
300 .. 500 °C
Ambient
Ambient to which substrate is exposed during processing
 Forming Gas (N2/H2)
Batch size 50
Excluded materials gold (category), copper
Pressure
Pressure of process chamber during processing
 760 Torr
Sides processed both
Wafer size
Wafer size
Equipment MRL Furnace 322-4
Equipment characteristics:
MOS clean no
Wafer holder
Device that holds the wafers during processing.
 quartz
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Borofloat (Schott), quartz (single crystal), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Comments:
  • This process allows for sintering of metallized wafers
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.