Process Hierarchy

Process characteristics:
Process duration
Process duration*
must be 10 .. 60 min
10 .. 60 min
Maximum temperature the substrate reaches during a process
Maximum temperature the substrate reaches during a process, must be 300 .. 500 °C
300 .. 500 °C
Ambient to which substrate is exposed during processing
Forming Gas (N2/H2)
Batch size 50
Excluded materials gold (category), copper
Pressure of process chamber during processing
760 Torr
Sides processed both
Wafer size
Wafer size
Equipment MRL Furnace 322-4
Equipment characteristics:
MOS clean no
Wafer holder
Device that holds the wafers during processing.
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
Borofloat (Schott), quartz (single crystal), silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
200 .. 1000 µm
  • This process allows for sintering of metallized wafers
Extra terms