Anodic bonding (with alignment) |
|
| Process characteristics: |
| Pressure Ambient pressure inside the chamber |
|
|---|
| Second substrate side bonded |
|
|---|
| Substrate side bonded |
|
|---|
| Alignment type Method used to align materials to be bonded. |
optical |
|---|
| Ambient Ambient to which substrate is exposed during processing |
nitrogen |
|---|
| Batch size |
2 |
|---|
| Second substrate diameter |
100 mm |
|---|
| Second substrate materials |
Pyrex (Corning 7740), silicon |
|---|
| Second substrate thickness |
300 .. 600 µm |
|---|
| Temperature |
450 .. 500 °C |
|---|
| Voltage |
1500 V |
|---|
| Wafer size |
|
|---|
| Equipment |
Karl Suss Bond aligner
|
| Equipment characteristics: |
| MOS clean |
no |
|---|
| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
|---|
| Wafer holder Device that holds the wafers during processing. |
aluminum chuck |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
Pyrex (Corning 7740), silicon, silicon on insulator |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
|---|
| Comments: |
|
