Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Anodic bonding (with alignment)
Process characteristics:
Pressure
Ambient pressure inside the chamber
Pressure
Ambient pressure inside the chamber, must be 5e-05 .. 760 Torr
5e-05 .. 760 Torr
Second substrate side bonded
Second substrate side bonded*
Substrate side bonded
Substrate side bonded*
Alignment type
Method used to align materials to be bonded.
 optical
Ambient
Ambient to which substrate is exposed during processing
 nitrogen
Batch size 2
Second substrate diameter 100 mm
Second substrate materials Pyrex (Corning 7740), silicon
Second substrate thickness 300 .. 600 µm
Temperature 450 .. 500 °C
Voltage 1500 V
Wafer size
Wafer size
Equipment Karl Suss Bond aligner
  • Maximum bond stack height is 6mm
Equipment characteristics:
MOS clean no
Wafer geometry
Types of wafers this equipment can accept
 1-flat, 2-flat
Wafer holder
Device that holds the wafers during processing.
 aluminum chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 Pyrex (Corning 7740), silicon, silicon on insulator
Wafer thickness
List or range of wafer thicknesses the tool can accept
 300 .. 600 µm
Comments:
  • Post-bonding alignment tolerance is 4um.