on front Silicon Nitride PECVD PlasmaTherm 790+ |
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| Process characteristics: |
| Thickness |
|
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| Deposition rate Rate at which material is added to a wafer |
10 nm/min |
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| Gas |
5%Silane, Amonia, Nitrogen |
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| Material |
silicon nitride |
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| Microstructure |
amorphous |
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| Refractive index |
2.15 |
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| Sides processed |
either |
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| Temperature |
250 °C |
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| Wafer size |
|
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| Equipment |
Plasma Therm 790+ Nitride / Oxide PECVD |
| Equipment characteristics: |
| Batch sizes |
100 mm: 9, 150 mm: 4, 200 mm: 1, 50 mm: 9, 75 mm: 9 |
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| Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat, notched, no-flat |
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| Wafer holder Device that holds the wafers during processing. |
aluminum plate |
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| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
gallium arsenide, indium phosphide, silicon, silicon carbide |
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| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 700 µm |
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