Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Silicon dioxide PECVD
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Batch size 3
Material silicon dioxide
Residual stress -220 MPa
Sides processed either
Temperature 200 °C
Wafer size
Wafer size
Equipment SemiGroup 1000
Equipment characteristics:
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon, silicon dioxide
Wafer thickness
List or range of wafer thicknesses the tool can accept
 50 .. 2000 µm