Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Dry/wet/dry oxidation
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 2 µm
0.1 .. 2 µm
Ambient
Ambient to which substrate is exposed during processing
 hydrogen, oxygen
Batch size 45
Excluded materials gold (category), copper
Growth rate
Rate at which film grows (linear approximation)
 3.3 .. 4.5 nm/min
Loading effects
Free form text field for description of loading effects (e.g. bullseye)
 None
Material silicon dioxide
Measured film thickness variation (+/- %) 2.6
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed both
Temperature 950 .. 1075 °C
Wafer size
Wafer size
Equipment MRL furnace 322-2
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 quartz chuck
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 1000 µm
Comments:
  • Wafers must be RCA cleaned within 24 hours of loading,or transferred directly from another furnace.
  • Standard CWRU wet oxidation. 5 min dry oxidation on either side of a variable time wet oxidation.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.