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Process characteristics: |
Thickness Amount of material added to a wafer |
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Material |
Parylene C |
Pressure Pressure of process chamber during processing |
0.1 Torr |
Sides processed |
both |
Temperature |
24 °C |
Wafer size |
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Equipment |
Parylene deposition system |
Equipment characteristics: |
Batch sizes |
100 mm: 4, 50 mm: 6, 75 mm: 5 |
Wafer geometry Types of wafers this equipment can accept |
no-flat, 1-flat, 2-flat, notched |
Wafer holder Device that holds the wafers during processing. |
flat chuck |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon, alumina, glass (category), metal (category), silicon on insulator, Pyrex (Corning 7740), quartz (single crystal), sapphire |
Wafer thickness List or range of wafer thicknesses the tool can accept |
100 .. 10000 µm |
Comments: |
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