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              | Process characteristics: | 
            
            | Thickness Amount of material added to a wafer  | 
             | 
            
            | Material | 
            Parylene C | 
            
            | Pressure Pressure of process chamber during processing  | 
            0.1 Torr | 
            
            | Sides processed | 
            both | 
            
            | Temperature | 
            24 °C | 
            
            
            | Wafer size | 
            
 | 
            
            
            
            | Equipment | 
            Parylene deposition system | 
            
            
            
              | Equipment characteristics: | 
            
            | Batch sizes | 
            100 mm: 4, 50 mm: 6, 75 mm: 5 | 
            
            | Wafer geometry Types of wafers this equipment can accept  | 
            no-flat, 1-flat, 2-flat, notched | 
            
            | Wafer holder Device that holds the wafers during processing.  | 
            flat chuck | 
            
            | Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself).  | 
            silicon, alumina, glass (category), metal (category), silicon on insulator, Pyrex (Corning 7740), quartz (single crystal), sapphire | 
            
            | Wafer thickness List or range of wafer thicknesses the tool can accept  | 
            100 .. 10000 µm | 
            
            
            
              | Comments: | 
            
            
        
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