Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Ion implant
Process characteristics:
Angle
Incidence angle of implanting ion beam with respect to substrate surface
Angle
Incidence angle of implanting ion beam with respect to substrate surface
unconstrained
Dopant type
Species to be implanted
Dopant type
Species to be implanted
Dose
Number of ions implanted per unit area on substrate.
Dose
Number of ions implanted per unit area on substrate.
unconstrained
Energy
Accelerated energy of ions in beam.
Energy
Accelerated energy of ions in beam.
unconstrained
Sides processed either
Equipment
Comments:
  • The substrate is placed in a vacuum chamber and bombarded by a beam of highly energized ions. The ions penetrate the surface of the substrate and are slowed down by collision with the atoms in the substrate. The penetration depth depends on the energy of the ions on the atom density in the substrate. A thermal anneal is typically performed after implantation to repair the substrate crystal and incorporate the implanted ions.