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Process characteristics: |
Second substrate side bonded |
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Substrate side bonded |
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Alignment tolerance Registration of CAD data to features on wafer |
5 µm |
Alignment type Method used to align materials to be bonded. |
optical |
Batch size |
2 |
Process duration |
30 min |
Second substrate diameters |
100 mm |
Second substrate geometry |
wafer |
Second substrate material |
silicon |
Second substrate thickness |
400 .. 1000 µm |
Temperature |
1100 °C |
Wafer holder Device that holds the wafers during processing. |
aluminum chuck |
Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon |
Wafer size |
|
Equipment |
Karl Suss Bond aligner
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Equipment characteristics: |
MOS clean |
no |
Wafer geometry Types of wafers this equipment can accept |
1-flat, 2-flat |
Wafer thickness List or range of wafer thicknesses the tool can accept |
300 .. 600 µm |
Comments: |
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