Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  Boron diffusion
Process characteristics:
Diffusion depth
Diffusion depth*
Ambient
Ambient to which substrate is exposed during processing
 nitrogen, oxygen
Batch size 24
Dopant concentration
Number of atoms per meter cubed
 8e+19 atom/cc
Excluded materials gold (category), copper
Film grown
Material grown during a process
 BSG
Growth rate
Rate at which film grows (linear approximation)
 0.25 nm/min
Loading effects
Free form text field for description of loading effects (e.g. bullseye)
 None
Material boron
Pressure
Pressure of process chamber during processing
 1 atm
Sides processed either
Temperature 1175 °C
Wafer size
Wafer size
Equipment MFL furnace 323-2
Equipment characteristics:
Wafer holder
Device that holds the wafers during processing.
 silicon carbide
Wafer materials
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
 silicon
Wafer thickness
List or range of wafer thicknesses the tool can accept
 200 .. 550 µm
Comments:
  • Wafers must be RCA cleaned within 24 hours of loading.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.