|
| Process characteristics: |
| Diffusion depth |
|
|---|
| Ambient Ambient to which substrate is exposed during processing |
nitrogen, oxygen |
|---|
| Batch size |
24 |
|---|
| Dopant concentration Number of atoms per meter cubed |
8e+19 atom/cc |
|---|
| Excluded materials |
gold (category), copper |
|---|
| Film grown Material grown during a process |
BSG |
|---|
| Growth rate Rate at which film grows (linear approximation) |
0.25 nm/min |
|---|
| Loading effects Free form text field for description of loading effects (e.g. bullseye) |
None |
|---|
| Material |
boron |
|---|
| Pressure Pressure of process chamber during processing |
1 atm |
|---|
| Sides processed |
either |
|---|
| Temperature |
1175 °C |
|---|
| Wafer size |
|
|---|
| Equipment |
MFL furnace 323-2 |
| Equipment characteristics: |
| Wafer holder Device that holds the wafers during processing. |
silicon carbide |
|---|
| Wafer materials List of wafer materials this tool can accept (not list of all materials, just the wafer itself). |
silicon |
|---|
| Wafer thickness List or range of wafer thicknesses the tool can accept |
200 .. 550 µm |
|---|
| Comments: |
|
| Extra terms |
Customer agrees that wafers, masks, and other materials
incorporating any process(es) provided by this fabrication site
are to be used solely for non-commercial research
purposes.
|
