How to Start
Boron pre-deposition: View
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
or call us at (703) 262-5368
must be 0 .. 4e+20 atom/cc
0 .. 4e+20 atom/cc
must be 0 .. 15 µm
0 .. 15 µm
Ambient to which substrate is exposed during processing
Material grown during a process
Pressure of process chamber during processing
900 .. 1175 °C
Thermco TMX furnace (A-stack)
Device that holds the wafers during processing.
silicon carbide boat
List of wafer materials this tool can accept (not list of all materials, just the wafer itself).
List or range of wafer thicknesses the tool can accept
500 .. 850 µm
Furnace capable of shallow and deep Boron diffusions using a B2O3 containing solid source.
Maximum depth of deep diffusion is 15 um.
"Diffusion depth" is the depth at which boron concentration equals the user-requested concentration value.
Expect up to 30% loss of wafers for each run.
Wafers must have been Pre-Furnace Cleaned immediately prior to diffusion.