Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Poly-Silicon-Germanium LPCVD
  1 Pre-furnace clean (for metallized wafers with DUV photoresist)
  2 Poly-Silicon-Germanium nucleation layer LPCVD
Materialpoly-Silicon-Germanium
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Wafers have duv photoresist
Wafers have duv photoresist*
yes no
Wafers metallized
Wafers metallized*
yes no
Wafers mos clean
Wafers mos clean*
yes no
Batch sizes 100 mm: 24, 150 mm: 12
Excluded materials gold
Material poly-Silicon-Germanium
Wafer size
Wafer size
Comments:
  • Film composition is ~60% Ge and ~68% Ge for 4" and 6" versions of the recipes, respectively.