Process Hierarchy

  Poly-Silicon-Germanium LPCVD
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Wafers have duv photoresist
Wafers have duv photoresist*
yes no
Wafers metallized
Wafers metallized*
yes no
Wafers mos clean
Wafers mos clean*
yes no
Batch sizes 100 mm: 24, 150 mm: 12
Excluded materials gold
Material poly-Silicon-Germanium
Wafer size
Wafer size
  • Film composition is ~60% Ge and ~68% Ge for 4" and 6" versions of the recipes, respectively.