Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  POCl diffusion
  1 Pre-diffusion clean
  1.1 4:1 Sulfuric/peroxide bath
  1.2 50:1 HF dip
  1.3 HCl bath
  2 Phosphorus diffusion
Materialphosphoryl chloride
  3 50:1 HF dip
  4 Nitrogen anneal
on front
  5 Sheet resistance measurement
Process characteristics:
Anneal duration
Anneal duration*
must be 0 .. 1440 min
0 .. 1440 min
Anneal temperature
Anneal temperature*
must be 950 .. 1100 °C
950 .. 1100 °C
Perform clean
Perform clean*
yes no
Wafer size
Wafer size
Comments:
  • Oxide removal (HF dip) may be done after annealing at user's choice.