Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  ITO lift-off Down
on front
  1 Contact photolithography (front-front align) (Shipley 1813)
MaterialShipley 1813
  1.1 HMDS Prime
MaterialHMDSThickness1 nm
on front
  1.2 Photoresist coat (Shipley 1813)
MaterialShipley 1813
  1.3 Photoresist softbake (Shipley 1813)
MaterialShipley 1813
on front
  1.4 Contact front-front alignment
on front
  1.5 Contact G-line exposure
Depth10 µm
on front
  1.6 Photoresist develop (Shipley 1813)
MaterialShipley 1813
on front
  2 Indium Tin Oxide (ITO) DC-magnetron sputtering
Materialindium tin oxideResidual stress-403.27 MPa
  3 Lift-off etch
MaterialShipley 1813
on front
  4 Stylus profilometer step measurement
Depth100 µm
Process characteristics:
Thickness
Thickness*
must be 0.1 .. 0.2 µm
0.1 .. 0.2 µm
Excluded materials gold (category), copper
Material indium tin oxide
Max field size 100 mm
Min feature size 2 µm
Resist thickness 1.3 µm
Wafer size
Wafer size
Comments:
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.