Process Hierarchy

on front
  P-type polygermanium LPCVD
Materialpoly-GermaniumResidual stress26 MPa
Process characteristics:
Amount of material added to a wafer
Amount of material added to a wafer, must be 0 .. 2 µm
0 .. 2 µm
Wafers have duv photoresist
Wafers have duv photoresist*
yes no
Wafers metallized
Wafers metallized*
yes no
Wafers mos clean
Wafers mos clean*
yes no
Batch sizes 100 mm: 24
Excluded materials gold
Material poly-Germanium
Wafer size
Wafer size
  • Wafers with metals or photoresists must be cleaned using "Photoresist removal", they are not allowed in "Piranha cleans".
  • "Piranha Clean II" is not a MOS CLEAN process.