Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Contact photolithography (front-back align) (Shipley 1813)
  1 HMDS Prime
MaterialHMDSThickness1 nm
on front
  2 Photoresist coat (Shipley 1813)
MaterialShipley 1813
  3 Photoresist softbake (Shipley 1813)
MaterialShipley 1813
on front
  4 Contact front-back alignment
on front
  5 Contact G-line exposure
Depth10 µm
on front
  6 Photoresist develop (Shipley 1813)
MaterialShipley 1813
  7 Photoresist hardbake (Shipley 1813)
MaterialShipley 1813
Process characteristics:
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Resist thickness*
must be 1.3 .. 2.5 µm
1.3 .. 2.5 µm
Excluded materials gold (category), copper
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
 line
Field geometry
Shape of field with dimensions characterized by the maximum field size
 circle
Magnification 1
Material Shipley 1813
Max field size 90 mm
Min feature size 2 µm
Wafer size
Wafer size
Comments:
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.