Process Hierarchy

on front
  Contact photolithography (front-back align) (Shipley 1813)
  1 HMDS Prime
MaterialHMDSThickness1 nm
MaterialShipley 1813
MaterialShipley 1813
on front
  5 Contact G-line exposure
Depth10 µm
MaterialShipley 1813
MaterialShipley 1813
Process characteristics:
Perform hard bake
Perform hard bake*
yes no
Resist thickness
Resist thickness*
must be 1.3 .. 2.5 µm
1.3 .. 2.5 µm
Excluded materials gold (category), copper
Feature geometry
Shape of feature with dimensions characterized by the minimum feature size
Field geometry
Shape of field with dimensions characterized by the maximum field size
Magnification 1
Material Shipley 1813
Max field size 90 mm
Min feature size 2 µm
Wafer size
Wafer size
Extra terms