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Undoped polysilicon LPCVD: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Undoped polysilicon LPCVD
1
RCA clean with HF Dip (Pre-furnace clean)
1.1
RCA clean
1.2
HF Dip
2
Undoped polysilicon LPCVD
Material
polysilicon
on front
3
Spectrophotometric film thickness measurement
Thickness
20 .. 5000 nm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness
*
µm
nm
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Excluded materials
gold (category), copper
Material
polysilicon
Wafer size
Wafer size
100 mm
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.