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About MEMS
Tungsten lift-off: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Tungsten lift-off
on front
1
Contact photolithography (front-front align) (Shipley 1813)
Material
Shipley 1813
1.1
HMDS Prime
Material
HMDS
Thickness
1 nm
on front
1.2
Photoresist coat (Shipley 1813)
Material
Shipley 1813
1.3
Photoresist softbake (Shipley 1813)
Material
Shipley 1813
on front
1.4
Contact front-front alignment
on front
1.5
Contact G-line exposure
Depth
10 µm
on front
1.6
Photoresist develop (Shipley 1813)
Material
Shipley 1813
on front
2
Tungsten DC-magnetron sputtering (high power)
Material
tungsten
3
Lift-off etch
Material
Shipley 1813
on front
4
Stylus profilometer step measurement
Depth
100 µm
Process characteristics:
Thickness
Thickness
*
µm
must be 0.1 .. 0.2 µm
0.1 .. 0.2 µm
Batch size
1
Excluded materials
gold (category), copper
Material
tungsten
Max field size
100 mm
Min feature size
5 µm
Resist thickness
1.3 µm
Wafer size
Wafer size
100 mm
150 mm
Comments:
Total metal thickness must be less than 0.2 um.
The photoresist thickness should be >3X the tungsten thickness.
See
http://www.mems-exchange.org/users/litho-templates
for information about layout requirements.
Extra terms
Customer agrees that wafers, masks, and other materials incorporating any process(es) provided by this fabrication site are to be used solely for non-commercial research purposes.
