Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
  Forming gas anneal (N2/H2)
  1 Piranha/HF clean
  1.1 Piranha clean (MOS-clean)
  1.2 10:1 HF dip
  2 Forming gas anneal (N2/H2)
Process characteristics:
Perform clean
Perform clean*
yes no
Process duration
Running time of the process (excluding setup/shutdown time)
Process duration
Running time of the process (excluding setup/shutdown time), must be 0 .. 4 hour
0 .. 4 hour
Temperature
Maximum temperature the substrate reaches during a process
Temperature*
Maximum temperature the substrate reaches during a process, must be 400 .. 500 °C
400 .. 500 °C
Batch size 24
Excluded materials gold
Wafer size
Wafer size
Comments:
  • Clean will be skipped if anneal immediately follows furnace step at UCB (deposition or oxidation).