Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  G-line contact photolithography (Shipley 220)
  1 Dehydration bake
on front
  2 100% HMDS prime
MaterialHMDS
on front
  3 Photoresist coat (Shipley 220)
MaterialShipley 220Thickness7 µm
  4 Soft bake
on front
  5 Contact front-front alignment & exposure
on front
  6 Photoresist develop (Shipley 220)
MaterialShipley 220
Process characteristics:
Alignment type
Method used to align materials to be bonded.
Alignment type*
Method used to align materials to be bonded.
Magnification 1
Material Shipley 220
Max field size 100 mm
Min feature size 7 µm
Resist thickness 7 µm
Wafer size
Wafer size
Comments: