Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  Anodic bonding (with alignment)
  1 Solvent clean (acetone +IPA)
on front
  2 Contact front-front align & expose
  3 Anodic bonding (with alignment)
Process characteristics:
Bonding force
Specify contact force applied to substrates during bonding.
Bonding force*
Specify contact force applied to substrates during bonding., must be 50 .. 150 N
50 .. 150 N
Second substrate side bonded
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Second substrate side bonded*
Specify which side of the 2nd substrate is to bonded to the 1st substrate.
Substrate side bonded
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Substrate side bonded*
Specify which side of the 1st substrate is to bonded to the 2nd substrate.
Temperature
Temperature of the substrates during bonding.
Temperature*
Temperature of the substrates during bonding., must be 300 .. 550 °C
300 .. 550 °C
Voltage
Voltage applied across wafers during bonding.
Voltage*
Voltage applied across wafers during bonding., must be 500 .. 1200 V
500 .. 1200 V
Pressure
Pressure of process chamber during processing
 1 atm
Wafer size
Wafer size
Comments:
  • No organic materials permitted.
  • No metals on non-bonded wafer faces.
  • Maximum interconnect thickness between bonded pair = 300A.
  • Customer to provide bonding cross section and estimate of area bonded.
  • Other metals may be considered on an individual basis.