Process Hierarchy

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on front
  Wet oxidation (non-metal)
  1 Pre-diffusion clean
  1.1 4:1 Sulfuric/peroxide bath
  1.2 50:1 HF dip
  1.3 HCl bath
  2 Wet oxidation (non-metal)
Materialsilicon dioxide
on front
  3 Spectrophotometric film thickness measurement #1
Refractive index0 .. 4Thickness0.005 .. 50 µm
Process characteristics:
Thickness
Thickness of grown film.
Thickness*
Thickness of grown film., must be 0 .. 2 µm
0 .. 2 µm
Material silicon dioxide
Temperature 1100 °C
Wafer size
Wafer size