Process Hierarchy

on front
  Wet oxidation (non-metal)
  1.2 50:1 HF dip
  1.3 HCl bath
Materialsilicon dioxide
Refractive index0 .. 4Thickness0.005 .. 50 µm
Process characteristics:
Thickness
Thickness of grown film.
Thickness*
Thickness of grown film., must be 0 .. 2 µm
0 .. 2 µm
Material silicon dioxide
Temperature 1100 °C
Wafer size
Wafer size