Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
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  High temperature silicon dioxide (HTO) LPCVD
  1 Piranha clean
  2 Pre-furnace clean
  2.1 RCA clean
  2.2 HF dip
  3 High temperature silicon dioxide (HTO) LPCVD
Materialsilicon dioxideResidual stress-155 MPa
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  4 Spectroscopic ellipsometry film thickness measurement
Thickness0.01 .. 5 µm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0 .. 1.2 µm
0 .. 1.2 µm
Batch size 24
Material silicon dioxide
Wafer size
Wafer size