Process Hierarchy

on front
  P-doped polysilicon LPCVD
  1.1 RCA clean
  1.2 HF Dip
Materialpolysilicon (n-type)
Thickness20 .. 5000 nm
Process characteristics:
Thickness
Amount of material added to a wafer
Thickness*
Amount of material added to a wafer, must be 0.1 .. 5 µm
0.1 .. 5 µm
Excluded materials gold (category), copper
Material polysilicon (n-type)
Wafer size
Wafer size
Extra terms