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Contact photolithography (Shipley 1813): View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Doping
Etch
LIGA
Lift off
Lithography
Contact mask lithography
Maskless lithography
Miscellaneous lithography
Projection mask lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Contact photolithography (Shipley 1813)
1
Prebake
on front
2
HMDS coat
Material
HMDS
on front
3
Photoresist coat (Shipley 1813)
Material
Shipley 1813
Thickness
1.3 µm
4
Photoresist softbake
on front
5
Optical Front-to-Front Alignment
on front
6
Optical Exposure
7
Photoresist develop (Shipley 1813)
Material
Shipley 1813
8
Photoresist hardbake (110 degC)
Process characteristics:
Alignment side
Alignment side
*
back
front
Batch size
1
Magnification
1
Material
Shipley 1813
Resist thickness
1.3 µm
Wafer size
Wafer size
100 mm
150 mm
Comments:
This is a complete contact photolithography process module using photoresist Shipley 1813.
See
http://www.mems-exchange.org/users/litho-templates
for information about layout requirements.