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Low-stress polysilicon LPCVD: View
Process Hierarchy
Bonding
Clean
Consulting
Deposition
Evaporation
LPCVD
Low-stress SiN deposition
Miscellaneous deposition
Oxidation
PECVD
Spin casting
Sputtering
Doping
Etch
LIGA
Lift off
Lithography
Mask making
Metrology
Miscellaneous
Packaging
Polishing
Process technologies
Thermal
Unique capabilities
If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at
engineering@mems-exchange.org
or call us at (703) 262-5368
on front
Low-stress polysilicon LPCVD
1
Piranha clean
2
Pre-furnace clean
2.1
RCA clean
2.2
HF dip
3
Low-stress polysilicon LPCVD I (100MPa)
Material
polysilicon
Residual stress
50 .. 100 MPa
on front
4
Spectroscopic ellipsometry film thickness measurement
Thickness
0.01 .. 5 µm
Process characteristics:
Recipe
Please select one of the available recipes from the list.
Recipe
*
Recipe 1: 50 .. 100 MPa (on C#3) -as deposited
Recipe 2: 270 .. 300 MPa (on D#3) -as deposited
Recipe 3: -100 .. -50 MPa (on D#3) - with N2 anneal
Please select one of the available recipes from the list.
Thickness
Thickness
*
µm
must be 0 .. 1 µm
0 .. 1 µm
Batch size
24
Material
polysilicon
Wafer size
Wafer size
100 mm