Process Hierarchy

If you are interested in this process, either by itself or as part of a longer processing sequence, please send us email at engineering@mems-exchange.org or call us at (703) 262-5368
on front
  4X DUV photolithography
  1 Dehydration bake
  2 HMDS Prime
MaterialHMDS
on front
  3 DUV photoresist coat (Shipley UV210)
MaterialShipley UV210
  4 DUV photoresist softbake
MaterialShipley UV210
on front
  5 DUV Stepper front-front alignment
on front
  6 DUV exposure
MaterialShipley UV210
  7 DUV post-exposure bake
MaterialShipley UV210
on front
  8 DUV develop (Shipley UV210)
MaterialShipley UV210
  9 DUV photoresist hardbake
MaterialShipley UV210
Process characteristics:
Perform hard bake
Perform hard bake*
yes no
Batch size 12
Magnification 4
Material Shipley UV210
Max field size 21 mm
Min feature size 0.35 µm
Resist thickness 0.8 µm
Wafer size
Wafer size
Comments:
Attachments
asml_fiducials.gds (76.0 KB, application/octet-stream) [Browse]
attached by ozgur (Mehmet Ozgur) on 2004-01-06 16:21
Frame information